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The ISC056N08NM6ATMA1 is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS family. It features a drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 234 A. The device exhibits a maximum on-state resistance (Rds(on)) of 5.6 mOhms at a gate-source voltage of 10 V. It operates within a temperature range of -55 °C to +175 °C and utilizes a PG-TDSON-8 surface-mount package.
Verify component authenticity by cross-referencing the manufacturer part number with official Infineon documentation. Ensure the ordering suffix matches the required tape and reel configuration. Confirm RoHS compliance status and check for any specific handling instructions related to the PG-TDSON-8 package during assembly processes.
Select this component when an 80 V rating and low Rds(on) are required for high-current applications. Compare the 5.6 mOhms resistance against system loss requirements. Consider the PG-TDSON-8 footprint for PCB layout compatibility. Evaluate thermal dissipation needs based on the 234 A current rating and junction temperature limits.
This part belongs to the OptiMOS series, designed for general-purpose power switching. It complements other variants in the lineup offering different voltage and current ratings. The technology focuses on reducing conduction losses while maintaining robust switching characteristics suitable for modern electronic power systems.
Check for direct pin-compatible alternatives within the same OptiMOS family that offer similar electrical parameters. Verify if upgraded generations provide improved thermal or switching metrics without requiring PCB redesign.