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ISG0613N04NM6HSCATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 42A 10WHITFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for ISG0613N04NM6HSCATMA1
- Description：MOSFET 2N-CH 40V 42A 10WHITFN
- Series：OptiMOS™ 6
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：42A (Ta), 299A (Tc)
- Rds On (Max) @ Id, Vgs：0.88mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 780µA
- Gate Charge (Qg) (Max) @ Vgs：104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：6200pF @ 20V
- Power - Max：3W (Ta), 167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-PowerWDFN
- Supplier Device Package：PG-WHITFN-10-1
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for ISG0613N04NM6HSCATMA1
FET, MOSFET Arrays Overview
The ISG0613N04NM6HSCATMA1 is a dual N-channel OptiMOS™ 6 power transistor with a 40 V drain-source breakdown voltage. It features a maximum on-resistance of 0.88 mΩ and a continuous drain current of 299 A at 25 °C case temperature. The device includes internal body diodes, operates within a junction temperature range of -55 °C to +175 °C, and dissipates up to 167 W. Key dynamic parameters include a total gate charge of 69 nC and an output charge of 76 nC.
FET, MOSFET Arrays Feature Summary
- Symmetrical half-bridge configuration with integrated internal body diodes
- Optimized for low voltage drives, battery-powered applications, and high-performance SMPS
- Superior thermal resistance characteristics
- 100% avalanche tested for enhanced reliability
FET, MOSFET Arrays Applications
- Low voltage drive circuits
- Battery-powered applications
- High-performance switching mode power supplies (SMPS)
FET, MOSFET Arrays Procurement Notes
Verify the complete ordering code ISG0613N04NM6HSCATMA1 against Infineon's official documentation to ensure correct package PG-WHITFN-10-1 and marking. Confirm RoHS compliance and halogen-free status per IEC61249-2-21. Validate that industrial application qualification meets JEDEC standards before procurement.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring symmetrical half-bridge topologies with low RDS(on). Ensure thermal management supports the specified junction-to-case resistance values. Verify that the 40 V rating accommodates system transients and that the 299 A continuous current capability aligns with load requirements under defined case temperatures.
FET, MOSFET Arrays Part Context
This part belongs to the Infineon OptiMOS™ 6 family, designed for 40 V N-channel applications. It utilizes the PG-WHITFN-10-1 surface-mount package. The product is fully qualified according to JEDEC standards for industrial applications, ensuring suitability for demanding electronic environments.
FET, MOSFET Arrays Replacement Considerations
Consult Infineon's cross-reference tools or datasheets for direct replacements. Verify pinout compatibility, specifically the dual N-channel arrangement in the PG-WHITFN-10-1 package, and ensure electrical parameters such as RDS(on) and VGS(th) meet design specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
