ISG0616N10NM5HSCATMA1

FET, MOSFET Arrays Overview

The ISG0616N10NM5HSC is an OptiMOS™ 5 N-channel power transistor featuring a symmetrical half-bridge configuration within a PG-WHITFN-10-1 package. It provides a drain-source breakdown voltage of 100 V and a maximum on-resistance of 4.0 mΩ at VGS=10V. The device supports a continuous drain current of 139 A at TC=25°C and a pulsed current of 556 A. Key dynamic parameters include a total gate charge of 52 nC and an output charge of 68 nC. Thermal resistance from junction to case bottom is 0.6 °C/W, with an operating temperature range spanning -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Symmetrical half-bridge design integrating two matched N-channel MOSFETs for balanced switching performance
• Optimized for high-performance synchronous rectification in SMPS applications
• Superior thermal resistance enabled by dual-side cooling capabilities in the PG-WHITFN-10-1 package
• 100% avalanche tested to ensure robustness against inductive load switching events

FET, MOSFET Arrays Applications

• Low voltage drives and battery-powered systems
• High-performance Switched Mode Power Supplies (SMPS)
• Synchronous rectification in DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code ISG0616N10NM5HSCATMA1 matches the required tape-and-reel packaging format. Confirm that the component meets JEDEC industrial qualification standards for the intended environment. Ensure PCB layout accommodates the PG-WHITFN-10-1 footprint dimensions and thermal pad requirements for optimal heat dissipation.

FET, MOSFET Arrays Selection Notes

Select this component when a compact, thermally efficient half-bridge solution is required for 100 V applications. The low RDS(on) and optimized gate charge support high-frequency operation. Consider the dual-side cooling feature if board space limits copper area for thermal management. Validate that the 139 A continuous current rating aligns with peak load requirements under specified case temperatures.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS™ 5 family, designed for enhanced efficiency in low-voltage power conversion. The technology combines planar and trench concepts to minimize on-resistance while maintaining fast switching speeds. The symmetrical structure simplifies driver design by providing matched upper and lower leg characteristics within a single surface-mount package.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.