SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ISL9V2040S3S is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 390 V and a continuous collector current rating of 10 A. The device is housed in a TO-263AB plastic D2PAK-3 surface-mount package with three terminals. It operates within a temperature range from -40 °C to +175 °C. The component is qualified under the AEC-Q100 standard for automotive applications.
Verify the manufacturer designation carefully, as this part number appears in catalogs associated with Rochester Electronics and Fairchild Semiconductor prior to their acquisition by onsemi. Confirm the specific datasheet version and lot traceability requirements with the authorized distributor to ensure compliance with automotive quality standards.
Select this component for low-current switching applications requiring high voltage tolerance up to 390 V. Ensure the thermal management design accommodates the TO-263AB package's heat dissipation capabilities. Verify that the gate drive requirements match the IGBT's input characteristics for optimal switching performance.
This IGBT belongs to the family of power discrete semiconductors used in industrial and automotive power electronics. It serves as a switching element in circuits where moderate current levels and high blocking voltages are required. The TO-263AB package facilitates automated surface-mount assembly processes.
Publicly confirmed substitute part numbers are not available in the provided documentation.