ISL9V2040S3S

ISL9V2040S3S

$1.01
  • Description:IGBT 430V 10A TO-263
  • Series:EcoSPARK®

SKU:64edff6a9632 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 430V 10A TO-263
  • Series:EcoSPARK®
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):430 V
  • Current - Collector (Ic) (Max):10:00 AM
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 4V, 6A
  • Power - Max:130 W
  • Switching Energy:-
  • Input Type:Logic
  • Gate Charge:12 nC
  • Td (on/off) @ 25°C:-/3.64µs
  • Test Condition:300V, 1kOhm, 5V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263 (D2PAK)
  • Grade:-
  • Qualification:-

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ISL9V2040S3S

Overview

The ISL9V2040S3S is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 390 V and a continuous collector current rating of 10 A. The device is housed in a TO-263AB plastic D2PAK-3 surface-mount package with three terminals. It operates within a temperature range from -40 °C to +175 °C. The component is qualified under the AEC-Q100 standard for automotive applications.

Feature Summary

  • Single N-channel IGBT configuration
  • AEC-Q100 automotive qualification
  • Surface-mount D2PAK-3 packaging

Applications

  • Motor controllers
  • Motion control systems
  • Electronic ignition drivers

Procurement Notes

Verify the manufacturer designation carefully, as this part number appears in catalogs associated with Rochester Electronics and Fairchild Semiconductor prior to their acquisition by onsemi. Confirm the specific datasheet version and lot traceability requirements with the authorized distributor to ensure compliance with automotive quality standards.

Selection Notes

Select this component for low-current switching applications requiring high voltage tolerance up to 390 V. Ensure the thermal management design accommodates the TO-263AB package's heat dissipation capabilities. Verify that the gate drive requirements match the IGBT's input characteristics for optimal switching performance.

Part Context

This IGBT belongs to the family of power discrete semiconductors used in industrial and automotive power electronics. It serves as a switching element in circuits where moderate current levels and high blocking voltages are required. The TO-263AB package facilitates automated surface-mount assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

ISL9V2040S3SISL9V2040S3S
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