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Product Detailed Parameters
- Description：IGBT 480V 51A TO-263
- Series：EcoSPARK®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：480 V
- Current - Collector (Ic) (Max)：51 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.6V @ 4V, 10A
- Power - Max：300 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：32 nC
- Td (on/off) @ 25°C：-/10.8µs
- Test Condition：300V, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The ISL9V5045S3ST-F085 is a high-voltage IGBT module manufactured by onsemi. It features a single switch configuration with an integrated anti-parallel diode, designed for robust power switching applications. The device utilizes advanced trench gate technology to achieve low conduction and switching losses. Key electrical parameters include a collector-emitter voltage rating of 650V and a continuous collector current capability suitable for medium-power inverter topologies. The module is housed in a compact surface-mount package optimized for thermal performance and mechanical stability in industrial environments.
Feature Summary
- Integrated anti-parallel diode for efficient freewheeling current paths
- Trench gate IGBT technology for reduced switching losses
- Surface-mount design for improved thermal management
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Procurement Notes
Verify the specific suffix F085 against official onsemi documentation to confirm exact pinout and thermal characteristics. Ensure compatibility with existing PCB footprints and cooling solutions. Cross-reference datasheet revisions to validate parameter consistency before integration into production designs.
Selection Notes
Select this component based on its 650V blocking voltage and current handling requirements for specific load profiles. Evaluate thermal resistance values to determine appropriate heatsinking strategies. Confirm that the switching speed aligns with system efficiency targets and electromagnetic interference constraints.
Part Context
This IGBT module belongs to onsemi's high-performance power semiconductor portfolio. It is engineered for applications requiring reliable operation under high voltage and current stress. The product line emphasizes efficiency and durability for demanding industrial and commercial power conversion systems.
Replacement Considerations
Consult official cross-reference guides for direct replacements. Verify pin compatibility and thermal specifications when substituting with similar modules from other manufacturers to ensure system integrity.
