ITC1100

Overview

The ITC1100 is an NPN bipolar RF power transistor manufactured by Microsemi Corporation, designed for high-power applications. It features a collector-emitter breakdown voltage of 65V and delivers a maximum power output of 3400W. The device operates at a transition frequency of 1.03GHz with a DC current gain (hFE) minimum of 10 at 5A and 5V. Maximum collector current is 80A, and it utilizes chassis mount packaging.

Feature Summary

• High-power RF performance with 3400W output capability
• NPN bipolar construction optimized for high-frequency operation
• Chassis mount design for robust thermal management

Applications

• High-power RF amplification systems
• Wireless communication infrastructure
• Broadcast transmission equipment

Procurement Notes

Verify component authenticity through authorized channels as the ITC1100 is listed as obsolete. Confirm manufacturer documentation matches the specific part number to ensure compatibility with existing system designs. Check for valid replacement options from Microchip Technology due to end-of-life status.

Selection Notes

Select this component for applications requiring high-output power in RF environments. Ensure thermal management solutions support chassis mounting requirements. Verify that system voltage and current limits align with the 65V breakdown and 80A collector current specifications before integration.

Part Context

The ITC1100 belongs to the Bipolar RF Transistors category produced by Microsemi Corporation, now part of Microchip Technology. This series targets aerospace, defense, and communications sectors requiring reliable high-frequency power handling capabilities in rugged operational environments.

Replacement Considerations

Consult Microchip Technology official documentation for verified substitute part numbers compatible with the ITC1100 specifications. No direct public substitutes are confirmed in available sources.