ITD50N04S4L07ATMA1

FET, MOSFET Arrays Overview

The ITD50N04S4L-07 is a dual N-channel logic level common drain enhancement mode power transistor from Infineon Technologies, utilizing OptiMOS-T2 technology. It features a PG-TO252-5 package with a maximum drain-source voltage of 40 V and a continuous drain current of 50 A at 25°C. The device exhibits a maximum on-state resistance of 7.2 mΩ at VGS=10V and 10.6 mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.2 V to 2.2 V, total gate charge of 33 nC (typical), and an avalanche energy rating of 45 mJ. Thermal characteristics specify a junction-to-case thermal resistance of 3.2 K/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with common drain architecture for enhanced circuit integration
• AEC qualified reliability suitable for automotive environments
• High avalanche robustness verified through 100% single-pulse testing
• Logic-level gate drive capability enabling direct control from standard logic interfaces

FET, MOSFET Arrays Applications

• Automotive DC-DC converter circuits
• Motor control applications requiring dual-channel switching
• Low-voltage power management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the component meets the required automotive qualification standards for the intended application environment. Ensure compatibility with the specified PG-TO252-5 footprint during PCB layout finalization.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel MOSFETs in a compact surface-mount package. The low gate threshold voltage supports efficient drive from 3.3 V or 5 V logic sources. Evaluate the thermal resistance and safe operating area curves to ensure adequate heat dissipation under continuous load conditions within the -55°C to +175°C operating range.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family of power transistors designed for high efficiency and robust performance in automotive and industrial sectors. The dual-channel design reduces board space compared to discrete single-channel solutions. Manufactured by Infineon Technologies, it adheres to green product standards including RoHS compliance.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence when considering alternative components.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the ITD50N04S4L-07?

The maximum pulsed drain current is 200 A at a case temperature of 25°C.

Is the ITD50N04S4L-07 suitable for high-temperature automotive applications?

Yes, the device is AEC qualified and supports an operating temperature range from -55°C to +175°C.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage typically decreases as temperature increases, ranging from 1.2 V to 2.2 V at 25°C.