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The IXA20IF1200HB is a single N-channel IGBT from IXYS, utilizing XPT technology for optimized high-voltage performance. It features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 38 A at 25°C. The device exhibits a low saturation voltage (VCE(sat)) of 1.8 V at 15 V gate drive and 20 A. Packaged in a TO-247-3 through-hole housing, it supports a maximum power dissipation of 165 W. Operating temperatures range from -40°C to +125°C junction temperature.
Verify the specific suffix HB against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Check for End-of-Life (EOL) notifications or Product Change Notices (PCN), as this component may have limited availability or be subject to discontinuation. Ensure the ordering quantity meets any minimum order requirements specified by authorized distributors.
Select the IXA20IF1200HB when a 1200V rating with high current capacity (38A) is required. Compare its 1.8V VCE(sat) against alternative IGBTs to evaluate conduction efficiency. Consider the TO-247 footprint for PCB or chassis mounting constraints. Verify that the 165W power dissipation capability aligns with the system's thermal design and heatsinking strategy.
This component belongs to IXYS' XPT (eXtended Plate Technology) family, designed for high-voltage power switching. It complements other IXYS discrete semiconductors like MOSFETs and standard IGBTs, offering a balance between switching speed and conduction loss for industrial power electronics.
Direct substitutes include the IXA20IF1200P or IXA20IF1200TC, which share similar electrical ratings but may differ in packaging or specific thermal parameters. Cross-referencing with other manufacturers' 1200V/38A TO-247 IGBTs requires careful verification of VCE(sat), gate charge, and RBSOA curves to ensure circuit compatibility.