SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXA27IF1200HJ is a single N-channel XPT™ trench IGBT manufactured by IXYS. It features a collector-emitter breakdown voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 27 A at 25°C, with a maximum rating of 43 A. The device exhibits a low collector-emitter saturation voltage (VCEsat) of 1.8 V. It operates within a junction temperature range of -40°C to +125°C and dissipates up to 150 W of power. Packaged in an ISOPLUS247-3 through-hole housing, it utilizes silicon technology for robust high-voltage switching performance.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm electrical parameters match specifications. Ensure packaging integrity upon receipt to prevent damage to the ISOPLUS247-3 leads. Check for RoHS compliance documentation if required by specific regulatory standards.
Select this component for designs requiring a balance of low conduction loss and fast switching at 1200 V. Compare VCEsat and switching energy values against alternative IGBTs in the ISOPLUS247-3 package. Consider thermal resistance characteristics when designing heatsinking solutions for the target operating temperature range.
This discrete IGBT belongs to IXYS' XPT™ product family, which focuses on high-efficiency power switching. It serves as a standalone switching element distinct from integrated modules, allowing flexible circuit design for medium-current applications where individual device control is preferred over pre-packaged bridge configurations.
Potential substitutes include other 1200 V, ~27 A IGBTs in the ISOPLUS247-3 or TO-247 packages from IXYS or competitors. Verify pinout compatibility, thermal resistance, and electrical ratings before substitution. Note that this specific part number may be subject to end-of-life status; check current production availability.