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The IXA30RG1200DHG-TUB is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 43 A at 25°C. The device has a maximum power dissipation of 147 W and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 76 nC, a saturation voltage of 2.1 V at 15 V and 25 A, and switching energies of 2.5 mJ for turn-on and 3 mJ for turn-off. It utilizes the ISOPLUS-SMPD package.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS3 compliance status as indicated in official documentation. Check for specific product change notifications regarding label changes or package updates. Ensure storage conditions meet moisture sensitivity level requirements before assembly.
Select this component for applications requiring high voltage blocking capability and moderate current handling in a compact surface mount form factor. Consider the thermal resistance characteristics of the ISOPLUS-SMPD package for heat sink design. Evaluate switching energy losses against system efficiency targets. Verify compatibility with standard gate drive voltages and current requirements.
This part belongs to the IXA30 series of IGBTs from IXYS, which are designed for general purpose power switching applications. The series emphasizes reliability and robustness in industrial environments. The specific model variant indicates its voltage rating, current capacity, and packaging style within the broader product line.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult IXYS technical support or authorized distributors for verified alternative components that match the required electrical specifications and package dimensions.