IXA45IF1200HB

Overview

The IXA45IF1200HB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features the XPT trademark for optimized performance. The device is housed in a TO-247-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 45 A at 25°C, with a peak capability of 78 A. The saturation voltage (VCE(sat)) is rated at 1.8 V. Maximum power dissipation (Pd) is 325 W. The gate-emitter voltage range is -20 V to +20 V, with a leakage current of 500 nA. Operating temperatures span from -40°C to +125°C.

Feature Summary

• Incorporates XPT (Extra Plate Technology) for enhanced blocking voltage capabilities and reduced switching losses.
• Designed as a single IGBT module integrated with a fast recovery diode for efficient power conversion.
• Utilizes a robust TO-247-3 through-hole package suitable for high-power thermal management applications.

Applications

• Industrial motor drives and variable frequency drives
• High-frequency power supplies and inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of availability should focus on surplus distributors or secondary market sources rather than direct factory orders. Buyers must confirm the authenticity of stock and check for specific discontinuation notifications dated March 7, 2025. Due to the EOL status, lead times may vary significantly, and long-term supply stability cannot be guaranteed by the original producer.

Selection Notes

Select this part when a 1.2 kV, 45 A single IGBT with integrated fast diode is required in a TO-247-3 package. Ensure the application design accounts for the 325 W power dissipation limit and the -40°C to +125°C operating temperature range. Verify that the gate drive circuitry supports the specified ±20 V gate-emitter voltage limits. Consider the EOL status when planning for future maintenance or production runs.

Part Context

The IXA45IF1200HB belongs to the IXYS IXA series of XPT-based IGBTs. This series is characterized by the use of Extra Plate Technology to achieve high voltage ratings with low conduction losses. The TO-247-3 package is a standard industry form factor for medium-to-high power discrete semiconductors, facilitating easy mounting onto heatsinks. The integration of a fast diode simplifies circuit design for half-bridge or chopper configurations.

Replacement Considerations

As an End-of-Life product, direct replacements are not officially provided by IXYS. Engineers should evaluate alternative 1.2 kV, ~45 A IGBTs in TO-247 packages from current IXYS portfolios or other manufacturers. Cross-compatibility requires careful verification of pinouts, thermal resistance, and switching characteristics to ensure safe operation in existing designs.