SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXA4IF1200UC-TUB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS XPT Gen5 series. It features a 1200V collector-emitter breakdown voltage and a continuous collector current of 9A at 25°C. The device utilizes trench gate technology to achieve low saturation voltage and fast switching characteristics. Packaged in a TO-252 (DPAK) surface-mount housing, it supports operation within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status with the manufacturer prior to integration. Check for end-of-life notifications or production discontinuation notices. Ensure the ordering quantity aligns with the manufacturer's standard packaging multiples.
Select this component for applications requiring high-voltage isolation in compact surface-mount designs. Evaluate the thermal resistance of the TO-252 package against the expected power dissipation. Compare the gate charge specifications with available driver capabilities to ensure adequate switching speed. Verify that the 1200V rating provides sufficient margin for the target circuit voltage spikes.
This part belongs to the IXYS IXA4 family of XPT IGBTs, designed for medium-power switching applications. The series combines silicon planar technology with trench gate structures to reduce on-state losses. It serves as a discrete alternative to modules in space-constrained power electronics designs.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 1200V rating, 9A current capacity, and TO-252 footprint. Verify compatibility of gate threshold voltages and thermal management requirements.