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Product Detailed Parameters
- Description：IGBT NPT 3000V 38A TO-263
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：38 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 14A
- Power - Max：200 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：62 nC
- Td (on/off) @ 25°C：40ns/166ns
- Test Condition：960V, 14A, 20Ohm, 15V
- Reverse Recovery Time (trr)：1.4 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263
- Grade：-
- Qualification：-
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Overview
The IXBA14N300HV is a high-voltage, high-gain BiMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It integrates an IGBT with an anti-parallel diode in a single package to reduce conduction losses and simplify circuit design. The device features a blocking voltage of 3000V and a continuous collector current of 14A at 25°C. It utilizes a TO-247HV-3 package for through-hole mounting, supporting a maximum power dissipation of 200W and operating temperatures from -55°C to +150°C.
Feature Summary
- Integrates an anti-parallel diode with the IGBT structure to minimize conduction losses
- High gain characteristics reduce gate drive requirements
- Designed for high power density applications
Applications
- Switch-mode power supplies
- Resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Laser generators
- Capacitor discharge circuits
Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm that the TO-247HV-3 package dimensions match the target PCB footprint. Ensure thermal management solutions are rated for the specified 200W power dissipation limit under actual operating conditions.
Selection Notes
Select this component when a 3000V rating is required alongside integrated freewheeling functionality. The high-gain feature simplifies driver selection compared to standard IGBTs. Consider the thermal resistance of the TO-247HV-3 package relative to the expected ambient temperature and heat sink capabilities.
Part Context
This part belongs to IXYS' high-voltage BiMOSFET family, which combines MOS input impedance with bipolar output characteristics. These devices are engineered for efficiency in high-voltage switching environments where reduced component count and lower conduction losses are critical design factors.
Replacement Considerations
Cross-reference with IXBA10N300HV or IXBA12N300HV for similar voltage ratings but different current capacities. Verify pinout compatibility and thermal performance metrics before substituting.
