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Product Detailed Parameters
- Description：IGBT 1700V 16A TO-263HV
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：6V @ 15V, 10A
- Power - Max：150 W
- Switching Energy：1.2mJ (off)
- Input Type：Standard
- Gate Charge：65 nC
- Td (on/off) @ 25°C：15ns/160ns
- Test Condition：1360V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：360 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263HV
- Grade：-
- Qualification：-
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Overview
The IXBA16N170AHV-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes BIMOSFET technology, integrating an IGBT with a reverse-conducting diode in one package. The device features a TO-263D2 (D2PAK) surface-mount package and is supplied in a reel format with a factory pack quantity of 800 units. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current (Ic) of 16 A at 25°C. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates a high-voltage IGBT with a fast recovery anti-parallel diode for bidirectional current handling.
Applications
- High-voltage motor drive inverters
- Uninterruptible power supply (UPS) systems
- Industrial induction heating applications
Procurement Notes
Verify the specific suffix 'TRL' against the manufacturer's latest datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the procurement order aligns with the minimum multiple requirements associated with the reel quantity. Cross-reference the part number with official IXYS documentation to validate compliance with current environmental directives such as RoHS and REACH before finalizing purchase orders.
Selection Notes
Select this component when a compact surface-mount solution is required for high-voltage switching applications involving bidirectional current flow. The integrated diode functionality reduces board space compared to discrete combinations. Consider the thermal management capabilities of the TO-263D2 package relative to the expected power dissipation levels in the target circuit design.
Part Context
This part belongs to the IXYS BIMOSFET product line, which combines the low conduction losses of IGBTs with the freewheeling capability of MOSFETs. The HV designation indicates its suitability for high-voltage industrial environments. It serves as a specialized alternative to standard single IGBTs where reverse current conduction is necessary without additional external components.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with existing designs by comparing pinout configurations, thermal resistance values, and electrical characteristics with potential alternatives from the same manufacturer or other vendors.
