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Product Detailed Parameters
- Description：IGBT 3000V 29A ISOPLUS I4-PAC
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：29 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：6V @ 15V, 10A
- Power - Max：240 W
- Switching Energy：7.2mJ (on), 1.04mJ (off)
- Input Type：Standard
- Gate Charge：208 nC
- Td (on/off) @ 25°C：32ns/390ns
- Test Condition：1500V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：700 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-5 (3 Leads)
- Supplier Device Package：ISOPLUS i4-PAC™
- Grade：-
- Qualification：-
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Overview
The IXBF10N300C is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a 300V collector-emitter voltage rating and supports continuous collector currents up to 10A at 25°C. The device utilizes BiMOSFET technology to combine the switching speed of MOSFETs with the low saturation voltage of bipolar transistors. It is housed in a TO-264 package suitable for through-hole mounting.
Feature Summary
- Integrates BiMOSFET technology for enhanced switching performance
- Provides high gain characteristics for efficient drive requirements
- Designed for medium to high frequency operation
Applications
- High voltage power switching circuits
- Motor control applications requiring fast switching
- Inverter stages in power conversion systems
Procurement Notes
Verify the specific suffix 'C' against the manufacturer datasheet to confirm pinout and thermal specifications. Ensure the ordering part number matches the exact device variant required for your circuit design. Cross-reference with official IXYS documentation to validate availability and lead times before procurement.
Selection Notes
Select this component when high voltage isolation and rapid switching are critical. The BiMOSFET structure offers lower conduction losses compared to standard MOSFETs at similar voltage ratings. Evaluate thermal management needs based on the TO-264 package capabilities and expected load conditions.
Part Context
This device belongs to the IXYS high-voltage BIMOSFET family, designed to bridge the gap between MOSFETs and IGBTs. It targets applications needing faster switching than IGBTs but higher current handling than typical MOSFETs at voltages above 200V. The series emphasizes reliability in industrial power electronics.
Replacement Considerations
Potential substitutes include other high-voltage BiMOSFETs from IXYS such as the IXBF12N300 or IXBF15N300C. Verify compatibility regarding pin configuration, voltage ratings, and thermal resistance before substitution.
