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Product Detailed Parameters
- Description：IGBT 3000V 26A ISOPLUS I4-PAC
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：26 A
- Current - Collector Pulsed (Icm)：98 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 12A
- Power - Max：125 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：62 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.4 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-5 (3 Leads)
- Supplier Device Package：ISOPLUS i4-PAC™
- Grade：-
- Qualification：-
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Overview
The IXBF12N300 is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features an electrically isolated tab and utilizes silicon chip on direct-copper bond substrate technology. The device supports a collector-emitter voltage of 3000 V and a continuous collector current of 26 A at 25°C. Key electrical parameters include a saturation voltage of 3.2 V maximum at IC90, a gate charge of 62 nC, and a thermal resistance junction-to-case of 1.00 °C/W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- High blocking voltage capability with 3000 V rating
- Electrically isolated mounting surface for simplified installation
- Low saturation voltage for improved efficiency
- High peak current capability supporting up to 98 A pulsed operation
Applications
- Switch-mode power supplies
- Resonant-mode power supplies
- Capacitor discharge circuits
- Uninterrupted power supplies (UPS)
- Laser drivers
Procurement Notes
Verify the specific package type ISOPLUS i4-Pak against design requirements. Confirm that the 4000 V~ electrical isolation rating meets safety standards for the intended application. Ensure thermal management solutions account for the specified thermal resistance values to maintain junction temperatures within the operational limits during high-power switching events.
Selection Notes
Select this component for applications requiring high voltage isolation and robust peak current handling. The low gate drive requirement simplifies control circuitry design. Consider the thermal performance characteristics when designing heatsinking systems, particularly for continuous operation near the maximum rated current or elevated ambient temperatures.
Part Context
This device belongs to the BIMOSFET family from IXYS, combining the advantages of MOS input impedance with bipolar output characteristics. The use of direct-copper bond substrate enhances thermal conductivity compared to traditional methods. The isolated tab design allows for mounting without additional insulators, reducing thermal resistance and assembly complexity in high-power modules.
Replacement Considerations
Check datasheets for alternative high-voltage IGBTs or MOSFETs with similar 3000 V ratings and comparable pin configurations. Verify that any substitute maintains the required electrical isolation voltage and fits the ISOPLUS i4-Pak footprint without mechanical interference.
