IXBF55N300

$77.17

Description：IGBT 3000V 86A ISOPLUS I4-PAC
Series：BIMOSFET™

SKU:a7ed7e2f7a3f Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 3000V 86A ISOPLUS I4-PAC
Series：BIMOSFET™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：3000 V
Current - Collector (Ic) (Max)：86 A
Current - Collector Pulsed (Icm)：600 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 55A
Power - Max：357 W
Switching Energy：-
Input Type：Standard
Gate Charge：335 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：1.9 µs
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：i4-Pac™-5 (3 Leads)
Supplier Device Package：ISOPLUS i4-PAC™
Grade：-
Qualification：-

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IXBF55N300

Overview

The IXBF55N300 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing silicon technology. It features the BIMOSFET trademark and belongs to the Very High Voltage series. The component is housed in a TO-264-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 3 kV and a continuous collector current of 130 A at 25°C. The saturation voltage is rated at 3.2 V, with a power dissipation capacity of 625 W. Operating temperatures range from -55°C to +150°C.

Feature Summary

High voltage capability up to 3 kV for robust performance in demanding environments
BIMOSFET technology integration for enhanced switching characteristics
Single configuration suitable for discrete high-power applications

Applications

Industrial automation systems requiring high-voltage switching
Embedded systems with significant power handling needs
General electronics applications involving high-voltage isolation

Procurement Notes

Verify the specific datasheet version and RoHS compliance status before procurement, as regulatory details may vary. Confirm that the TO-264-3 package dimensions align with your PCB layout requirements. Ensure thermal management solutions support the 625 W dissipation rating. Check for any REACH-SVHC restrictions relevant to your region. Validate supply chain authenticity through authorized IXYS distributors to guarantee component integrity.

Selection Notes

Select the IXBF55N300 when circuit designs demand a 3 kV blocking voltage and high current handling. Consider the TO-264-3 package for through-hole assembly constraints. Evaluate the 3.2 V saturation voltage against system efficiency targets. Compare the 130 A continuous current rating with peak load requirements. Assess thermal resistance capabilities relative to the intended operating temperature range of up to 150°C.

Part Context

This component is part of IXYS's portfolio of high-voltage semiconductor devices. It utilizes silicon-based IGBT technology to balance conduction losses and switching speeds. The BIMOSFET designation indicates specific internal gate drive structures. It serves as a discrete solution for power conversion stages where modular IGBTs are not required. The device supports industrial-grade reliability standards.