IXBH10N170

Overview

The IXYS IXBH10N170 is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor designed for power switching applications. It features a 1700 V collector-emitter breakdown voltage and a continuous collector current of 20 A at 25°C case temperature. The device utilizes a TO-247AD through-hole package with an isolated mounting tab. Key electrical characteristics include a maximum saturated collector-emitter voltage of 3.8 V at 16 A and a total gate charge of 30 nC. Thermal resistance from junction to case is specified at 0.89 K/W, supporting operation within a -55°C to +150°C junction temperature range.

Feature Summary

• High blocking voltage capability up to 1700 V
• Low conduction losses with high current handling
• MOS gate drive simplicity for easy integration
• JEDEC compliant TO-247 AD surface mount or through-hole configuration

Applications

• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• Capacitor discharge circuits

Procurement Notes

Verify the specific datasheet revision and manufacturer status before procurement, as Littelfuse acquired IXYS. Confirm that the TO-247AD package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the 0.89 K/W junction-to-case resistance under expected load conditions. Check for RoHS compliance documentation if required by your manufacturing standards.

Selection Notes

Select this component when a 1700 V rating is necessary for high-voltage isolation in power conversion systems. The TO-247AD package facilitates robust mechanical mounting via a single screw. Consider the 3.8 V saturation voltage for efficiency calculations at nominal currents. Evaluate the 30 nC gate charge against your driver capabilities to ensure adequate switching speeds without excessive heat generation.

Part Context

This part belongs to the IXYS high-voltage IGBT family, specifically utilizing BIMOSFET technology. It shares the TO-247AD form factor with other devices in the series but offers distinct electrical parameters tailored for medium-power switching. The device represents a balance between blocking voltage and on-state conductivity suitable for industrial power electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.