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Product Detailed Parameters
- Description：IGBT 1700V 60A TO-247AD
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：230 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 24A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.06 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXBH24N170 is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a collector-emitter breakdown voltage of 1700 V and a continuous collector current rating of 60 A at 25°C. The device exhibits low conduction losses and requires a low gate drive requirement. It operates within a junction temperature range of -55°C to +150°C and utilizes an international standard package for mounting.
Feature Summary
- High blocking voltage capability with integrated monolithic bipolar MOS structure
- Low conduction losses optimized for power efficiency
- Low gate drive requirement simplifying control circuitry design
- High power density suitable for compact thermal management
Applications
- Switch-mode and resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Laser generators
- Capacitor discharge circuits
- AC switches
Procurement Notes
Verify the specific manufacturer datasheet for the IXBH24N170 to confirm current production status and exact electrical parameters. Ensure compatibility with the intended thermal management solution given the 1700V rating. Check for any recent product change notices or end-of-life announcements from IXYS before finalizing procurement plans.
Selection Notes
Select this component when designing systems requiring high voltage isolation and efficient switching performance. The 1700V rating supports robust operation in high-energy applications. Consider the 60A current capacity against peak load requirements. The BIMOSFET technology offers advantages in gain and conduction characteristics compared to standard IGBTs in similar voltage classes.
Part Context
This component belongs to the IXYS BIMOSFET family, which combines the benefits of MOSFET input impedance with IGBT output characteristics. The series is designed for high-voltage industrial applications. The IXBH24N170 specifically targets markets needing reliable high-power switching with reduced drive complexity.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-references with official IXYS documentation or authorized distributors for equivalent high-voltage BIMOSFET devices.
