IXBH28N170A

Description：IGBT 1700V 30A TO-247AD
Series：BIMOSFET™

SKU:c9fcf0145ebb Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1700V 30A TO-247AD
Series：BIMOSFET™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：6V @ 15V, 14A
Power - Max：300 W
Switching Energy：1.2mJ (off)
Input Type：Standard
Gate Charge：105 nC
Td (on/off) @ 25°C：35ns/265ns
Test Condition：850V, 14A, 10Ohm, 15V
Reverse Recovery Time (trr)：360 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXBH28N170A

Overview

The IXBH28N170A is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS BIMOSFET series. It features a TO-247AD-3 through-hole package and supports a maximum collector-emitter voltage of 1700 V. The device provides a continuous collector current of 28 A at 25°C, with a peak pulse current rating of 84 A. Key electrical characteristics include a maximum collector-emitter saturation voltage of 3.3 V at 15 V gate drive and 10 A collector current. Power dissipation is rated at 250 W, with an operating junction temperature range spanning from -55°C to +150°C.

Feature Summary

High-voltage capability with a 1700 V collector-emitter breakdown voltage for robust operation in demanding power environments.
Integrated anti-parallel fast recovery diode functionality inherent to the specific module configuration within the series.
Square Reverse Bias Safe Operating Area (RBSOA) ensuring reliable performance under short-circuit conditions.

Applications

Industrial motor drives and variable frequency drives
Uninterruptible power supplies (UPS)
High-frequency welding inverters

Procurement Notes

Verify the exact datasheet revision and manufacturer lot codes upon receipt. Confirm that the component matches the specified TO-247AD-3 package dimensions and pinout. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering. Cross-reference part numbers carefully as suffixes may indicate variations in packaging or testing standards.

Selection Notes

Select this component when a 1700 V rating is required alongside a 28 A continuous current capacity. The TO-247AD-3 package facilitates effective thermal management for high-power applications. Consider the 3.3 V saturation voltage for efficiency calculations in switching circuits. Evaluate the 250 W power dissipation limit against the intended heatsinking strategy to maintain safe junction temperatures.

Part Context

This IGBT belongs to the IXYS BIMOSFET family, which integrates specific trench technology for optimized switching performance. The series is designed for high-efficiency power conversion systems requiring high voltage blocking capabilities. The TO-247AD-3 package is standard for through-hole mounting in industrial power electronics modules.