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Product Detailed Parameters
- Description：IGBT 3000V 80A TO-247HV
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：280 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 32A
- Power - Max：400 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：142 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：TO-247HV
- Grade：-
- Qualification：-
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Overview
The IXYS IXBH32N300HV is a high-voltage, single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing BiMOSFET technology. It features a collector-emitter breakdown voltage of 3 kV and a continuous collector current of 32 A at 25°C. The device is housed in a TO-247HV-3 package with through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage of 3.2 V, a maximum power dissipation of 200 W, and an operating temperature range from -55°C to +150°C.
Feature Summary
- High-voltage capability with 3 kV collector-emitter breakdown voltage for robust operation in demanding environments.
- BiMOSFET monolithic construction integrating bipolar output with MOS input for high gain and fast switching.
- TO-247HV-3 package design optimized for high thermal performance and reliable through-hole installation.
Applications
- High-voltage DC-DC converters
- Induction heating systems
- High-power motor drives
Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with your circuit requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as supply chain conditions may vary. Ensure proper handling procedures are followed due to the sensitivity of semiconductor components to electrostatic discharge during storage and assembly.
Selection Notes
Select this component when a 3 kV rating is required for high-voltage isolation. The 32 A continuous current and 3.2 V saturation voltage offer a balance between conduction loss and switching speed. The TO-247HV-3 package facilitates efficient heat sinking. Consider the gate charge and switching characteristics for driver design. Evaluate thermal management needs based on the 200 W power dissipation rating and junction temperature limits.
Part Context
This IGBT belongs to IXYS' high-voltage BiMOSFET family, designed for applications requiring superior ruggedness and switching performance. The series utilizes advanced silicon technology to achieve high blocking voltages while maintaining low on-state losses. These devices are commonly used in industrial power supplies and renewable energy systems where reliability under high stress is critical.
Replacement Considerations
Cross-reference with other 3 kV IGBTs in the TO-247HV-3 package from IXYS or other manufacturers. Verify pinout compatibility, saturation voltage levels, and thermal resistance values before substitution. Ensure that any alternative device meets or exceeds the original specifications for voltage, current, and temperature ratings.
