IXBH42N250

Overview

The IXYS IXBH42N250 is a single silicon Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247AD-3 through-hole package. It features a maximum collector-emitter voltage of 2.5 kV and a continuous collector current of 104 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 3 V. Maximum power dissipation is rated at 500 W, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

• High-voltage capability up to 2.5 kV for robust switching applications
• High gain configuration enabling efficient gate drive requirements
• Monolithic integration of IGBT and anti-parallel diode

Applications

• High-power industrial motor drives
• Uninterruptible power supply (UPS) systems
• High-frequency welding equipment

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with standard TO-247 mounting hardware. Confirm RoHS compliance status via manufacturer documentation prior to integration into regulated assemblies.

Selection Notes

Select this component for circuits requiring high blocking voltage and substantial current handling in a single package. Evaluate thermal management needs based on the 500 W dissipation rating. Compare saturation voltage and switching times against system efficiency targets.

Part Context

This part belongs to the IXYS high-voltage IGBT portfolio, designed for demanding power electronics. It utilizes BiMOS technology to combine MOS input control with bipolar output conductivity. The TO-247AD-3 package provides enhanced isolation and mechanical stability for high-power modules.

Replacement Considerations

Direct substitutes include the IXBH42N300HV for higher voltage ratings or the IXBH2N250 for lower current applications. Verify pin compatibility and thermal resistance values when cross-referencing with other manufacturers' equivalent high-voltage IGBTs.