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Product Detailed Parameters
- Description：IGBT 3000V 104A TO-247HV
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：104 A
- Current - Collector Pulsed (Icm)：400 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 42A
- Power - Max：500 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.7 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：TO-247HV
- Grade：-
- Qualification：-
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Overview
The IXBH42N300HV is a high-voltage BiMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a TO-268HV package and supports through-hole mounting. Key electrical parameters include a collector-emitter breakdown voltage of 3000V, a continuous collector current of 42A at 25°C, and a maximum power dissipation of 357W. The saturation voltage is specified as 3.0V under standard test conditions. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High blocking voltage capability for demanding insulation requirements
- Integrated gate drive structure reducing external component count
- Robust safe operating area performance under fault conditions
Applications
- Laser generators
- Capacitor discharge circuits
- AC switches
- Protection circuits
Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with your design requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability fluctuates. Ensure thermal management solutions align with the 357W dissipation rating in your final assembly configuration.
Selection Notes
Select this component when high voltage isolation and high peak current handling are required in a single package. The integrated gate structure simplifies driver design compared to discrete IGBTs. Consider the TO-268HV footprint for PCB layout constraints. Evaluate thermal resistance characteristics against your heat sink capabilities to maintain junction temperatures within the specified operational limits during continuous duty cycles.
Part Context
This device belongs to the IXYS BiMOSFET family, combining MOS input impedance with bipolar output characteristics. It is designed for high-power switching applications where high voltage tolerance is critical. The TO-268HV package provides enhanced creepage and clearance distances suitable for industrial and energy conversion systems requiring robust electrical isolation.
Replacement Considerations
The IXBT42N300HV is a documented alternative within the same product line, sharing identical electrical specifications but utilizing a different package style. Verify pinout compatibility and mechanical dimensions before substitution. Other series members like the IXBF42N300 may offer similar electrical performance but differ in switching speed characteristics.
