IXBH5N160G

Description：IGBT 1600V 5.7A TO-247AD
Series：BIMOSFET™

SKU:6455bfbfdb2a Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1600V 5.7A TO-247AD
Series：BIMOSFET™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1600 V
Current - Collector (Ic) (Max)：5.7 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：7.2V @ 15V, 3A
Power - Max：68 W
Switching Energy：-
Input Type：Standard
Gate Charge：26 nC
Td (on/off) @ 25°C：-
Test Condition：960V, 3A, 47Ohm, 10V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXBH5N160G

Overview

The IXBH5N160G is a high voltage BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It serves as a substitute for high voltage MOSFETs, offering significantly lower voltage drop while maintaining MOSFET-compatible control with a 10 V turn-on gate voltage. The device supports fast switching for high-frequency operation and features reverse conduction capability.

Feature Summary

High voltage BIMOSFET technology providing lower voltage drop compared to standard high voltage MOSFETs
MOSFET-compatible control utilizing a 10 V turn-on gate voltage
Fast switching characteristics designed for high-frequency operation
Integrated reverse conduction capability

Applications

Switched mode power supplies
DC-DC converters
Resonant converters
Lamp ballasts
Laser generators and X-ray generators

Procurement Notes

Verify the specific package variant (TO-220AB or TO-247AD) required for your design, as the datasheet indicates availability in industry-standard packages. Confirm that the epoxy meets UL94V-0 flammability ratings if safety compliance is critical for your application environment.

Selection Notes

Select this component when replacing existing high voltage MOSFETs to achieve reduced conduction losses without altering the gate drive circuitry. Ensure the thermal management solution accommodates the device's power dissipation requirements during high-frequency switching operations.

Part Context

This component belongs to the BIMOSFET family from IXYS, combining the ease of MOSFET gate drive with the low on-state voltage of bipolar devices. It is engineered for applications requiring efficient high-voltage switching where traditional MOSFETs would exhibit excessive conduction losses.

Replacement Considerations

Direct substitutes include other IXYS high voltage BIMOSFETs such as the IXBF series or IXBA series. Verify pinout compatibility and thermal resistance specifications before swapping with alternative part numbers.