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The IXYS IXBN75N170A is a BiMOSFET monolithic bipolar MOS transistor featuring an integrated anti-parallel diode. It utilizes the SOT-227B (miniBLOC) package with screw mounting. The device supports a maximum collector-emitter voltage of 1700 V and handles a continuous collector current of 75 A at 25°C, or 42 A at 90°C. The saturation voltage is rated at a maximum of 6.00 V at IC90. Thermal resistance from junction to case is 0.20 °C/W. The component operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet revision DS98938B(8/16) when sourcing. Confirm that the SOT-227B package dimensions match the target PCB footprint. Ensure thermal interface materials are compatible with the miniBLOC mounting style. Check for RoHS compliance status in the latest manufacturer documentation before finalizing orders.
Select this component for high-voltage applications requiring fast switching speeds. The 1700V rating suits industrial inverters and high-power converters. Consider the 6.00V saturation voltage for efficiency calculations at 42A. The integrated diode simplifies circuit design by eliminating external freewheeling components.
This part belongs to the IXYS BiMOSFET family, combining IGBT and MOSFET technologies. It is designed for medium to high-power switching applications. The miniBLOC package allows for efficient heat dissipation through direct chassis mounting. It serves as a robust alternative to discrete MOSFET solutions in demanding environments.
Direct substitutes include IXBN75N170 and IXBX75N170. Verify pinout compatibility and thermal resistance values before swapping. Ensure the replacement part meets the same 1700V voltage rating and current handling requirements.