IXBP5N160G

Overview

The IXBP5N160G is a monolithic bipolar MOS transistor, marketed as a High Voltage BIMOSFET. It features a TO-220AB or TO-247AD package and operates with a 10 V turn-on gate voltage. The device provides fast switching for high-frequency operation and includes reverse conduction capability. It serves as a substitute for high-voltage MOSFETs, offering significantly lower voltage drop while maintaining MOSFET-compatible control.

Feature Summary

• Monolithic Bipolar MOS Transistor architecture
• Reverse conduction capability
• Fast switching for high frequency operation
• MOSFET compatible control with 10 V turn on gate voltage

Applications

• Switched mode power supplies
• DC-DC converters
• Resonant converters
• Lamp ballasts
• Laser generators
• X ray generators

Procurement Notes

Verify the specific package variant (TO-220AB or TO-247AD) required for your design, as datasheets may list both. Confirm RoHS compliance status through official manufacturer documentation before procurement. Ensure the supplier provides genuine IXYS Corporation components to guarantee performance specifications are met.

Selection Notes

Select this component when replacing standard high-voltage MOSFETs to achieve lower voltage drops. The 10 V gate drive requirement aligns with common logic-level drivers. Consider the reverse conduction feature if bidirectional current flow is necessary in the circuit topology without additional diodes.

Part Context

This device belongs to the IXYS High Voltage BIMOSFET family. It is designed to replace traditional high-voltage MOSFETs by combining the ease of gate drive with improved conduction characteristics. The technology integrates bipolar and MOS structures on a single die.

Replacement Considerations

Direct substitutes within the same series include IXBA10N300HV, IXBA12N300HV, and IXBA14N300HV. Verify pinout compatibility and thermal resistance differences when transitioning between these specific part numbers.