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Product Detailed Parameters
- Description：IGBT 1700V 20A TO-268AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：3.8V @ 15V, 10A
- Power - Max：140 W
- Switching Energy：6mJ (off)
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：35ns/500ns
- Test Condition：1360V, 10A, 56Ohm, 15V
- Reverse Recovery Time (trr)：360 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXBT10N170 is a single silicon IGBT from the BIMOSFET series, housed in a D3PAK-3 (TO-268-3) surface-mount package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 40 A at 25°C. The device exhibits a collector-emitter saturation voltage of 3.4 V and supports a power dissipation of 140 W. Operating temperatures range from -55°C to +150°C, with a gate-emitter voltage limit of ±20 V.
Feature Summary
- High-voltage blocking capability up to 1.7 kV for robust operation in demanding environments
- Integrated BiMOS structure combining high input impedance with low on-state losses
- Surface-mount D3PAK-3 packaging designed for efficient thermal management and automated assembly
Applications
- Industrial motor drives and inverters
- Switch-mode power supplies
- Uninterruptible power systems
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm datasheet revisions and RoHS compliance status prior to integration. Ensure storage conditions meet moisture sensitivity level requirements to prevent package degradation during soldering processes.
Selection Notes
Select this component for applications requiring high voltage isolation and moderate current handling in a compact surface-mount form factor. Evaluate thermal resistance characteristics against system heat sink capabilities. Compare saturation voltage specifications with alternative devices to optimize conduction losses within the target circuit design.
Part Context
This device belongs to the IXYS BIMOSFET family, which integrates MOS input technology with bipolar output characteristics. The series targets high-power switching applications where efficiency and reliability are critical. The TO-268-3 package provides a balance between electrical performance and mechanical footprint for industrial electronics.
Replacement Considerations
Cross-reference with other IXBT10N170 variants or equivalent 1700V IGBTs in TO-268-3 packages. Verify pinout compatibility and thermal interface dimensions before substitution.
