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Product Detailed Parameters
- Description：IGBT 1700V 16A TO-268AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：6V @ 15V, 10A
- Power - Max：150 W
- Switching Energy：1.2mJ (off)
- Input Type：Standard
- Gate Charge：65 nC
- Td (on/off) @ 25°C：15ns/160ns
- Test Condition：1360V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：360 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXBT16N170A is a single N-channel IGBT from the BIMOSFET series, manufactured by IXYS. It utilizes silicon technology and is housed in a D3PAK-3 (TO-268-3) surface-mount package. The device features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 16 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 6 V, a gate-emitter voltage range of -20 V to 20 V, and a power dissipation rating of 190 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- High-voltage capability with a 1.7 kV collector-emitter breakdown voltage for robust switching applications.
- Surface-mount construction in a D3PAK-3 package designed for automated assembly processes.
- Integrated fast recovery anti-parallel diode functionality inherent to the BIMOSFET structure.
Applications
- Industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status prior to procurement, as manufacturing specifications may evolve. Confirm that the D3PAK-3 footprint matches the target PCB design. Ensure thermal management solutions are adequate for the 190 W power dissipation rating under expected operating conditions. Check for any REACH SVHC declarations relevant to the supply region.
Selection Notes
Select this component when a high-voltage, surface-mount IGBT is required for medium-current applications. The 1.7 kV rating suits systems operating above standard low-voltage limits. Compare the 6 V saturation voltage against alternative packages like TO-247 if lower conduction losses are critical. Consider the 16 A continuous current limit relative to peak load requirements and derating curves.
Part Context
This part belongs to the IXYS BIMOSFET family, combining an IGBT with a fast recovery diode in a single package. The IXBT suffix typically denotes the D3PAK-3 surface-mount variant, distinguishing it from through-hole options like the IXBH series. It serves as a discrete solution for power conversion stages requiring compact form factors.
Replacement Considerations
The IXGT16N170A offers identical pinout and packaging but features a lower saturation voltage of 5 V. The IXGH10N170A provides similar voltage ratings but with different current characteristics. Verify thermal resistance values when substituting to ensure equivalent heat dissipation performance.
