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Product Detailed Parameters
- Description：IGBT 3000V 50A TO-268AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 20A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：105 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.35 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXBT20N300HV is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the Very High Voltage series and utilizes BiMOSFET technology for monolithic bipolar MOS construction. The device features a TO-268HV (D3PAK-3) surface-mount package designed for robust thermal performance. Key electrical specifications include a collector-emitter breakdown voltage of 3 kV and a continuous collector current rating of 20 A at 25°C. The saturation voltage is specified at 3.2 V, with a maximum power dissipation of 160 W. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- High voltage capability up to 3 kV for demanding power switching applications
- BiMOSFET technology integrating gate drive and protection functions on a single die
- Surface-mount D3PAK-3 package optimized for automated assembly and thermal management
Applications
- High voltage DC-DC converters
- Induction heating systems
- Power supplies for medical equipment
- Industrial motor drives
Procurement Notes
Verify the specific suffix or variant against the official IXYS datasheet to ensure compatibility with required voltage and current ratings. Confirm RoHS compliance status and humidity sensitivity handling requirements during storage and assembly. Check for any recent product change notifications that may affect pinout or thermal characteristics before finalizing procurement.
Selection Notes
Select this component when a 3 kV blocking voltage is required in a surface-mount form factor. Compare the 20 A continuous current rating against peak load requirements to ensure adequate margin. Evaluate the 3.2 V saturation voltage for conduction loss calculations in the target circuit design. Ensure the PCB layout supports the thermal dissipation needs of the TO-268HV package.
Part Context
This part is part of IXYS's high-voltage IGBT portfolio, specifically utilizing their proprietary BiMOSFET technology. It serves as a discrete switching solution for medium-to-high power applications where high voltage isolation and reliable switching are critical. The TO-268HV package provides a balance between power density and ease of mounting compared to larger through-hole alternatives.
Replacement Considerations
Direct replacements within the same family include IXBT12N300HV and IXBT32N300HV, which share similar voltage ratings but differ in current capacity. Verify pinout compatibility and thermal resistance values when substituting with other manufacturers' 3 kV IGBTs in the TO-268 package.
