ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 1700V 60A TO-268AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：230 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 24A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.06 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
Download product information
Overview
The IXBT24N170 is a BiMOSFET reverse conducting IGBT manufactured by IXYS. It integrates an N-channel IGBT and a P-channel MOSFET in a single D3PAK-3 (TO-268-3) surface-mount package. The device features a 1700 V collector-emitter voltage rating and a continuous collector current of 24 A at 25°C. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates an N-channel IGBT with a P-channel MOSFET for reverse conduction capability
- Designed for high-voltage switching applications requiring integrated freewheeling
- Utilizes a surface-mount D3PAK-3 package for automated assembly
Applications
- High-frequency power conversion circuits
- Induction heating systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific datasheet version and electrical characteristics directly from the manufacturer or authorized distributor before integration. Confirm that the D3PAK-3 package dimensions match the target PCB footprint. Ensure thermal management solutions account for the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component when a compact solution combining fast reverse recovery with high blocking voltage is required. The integrated P-MOSFET eliminates the need for external diodes, reducing board space and parasitic inductance. Verify compatibility with standard gate drive voltages and ensure the thermal resistance of the heatsink meets the system's power loss requirements.
Part Context
This part belongs to the IXYS BiMOSFET family, which combines IGBT and MOSFET technologies. These devices are engineered to provide superior performance in high-power applications compared to discrete combinations. The TO-268-3 package offers robust mechanical stability and efficient heat transfer for industrial electronics.
Replacement Considerations
Cross-reference with IXYS models sharing the same pinout and voltage ratings, such as the IXGT series for standard IGBTs if reverse conduction is not needed. Verify that any substitute maintains the same package type and thermal characteristics to ensure mechanical fit.
