IXBT2N250

$19.79

Description：IGBT 2500V 5A TO-268AA
Series：BIMOSFET™

SKU:05ca941acc71 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 2500V 5A TO-268AA
Series：BIMOSFET™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：2500 V
Current - Collector (Ic) (Max)：5:00 AM
Current - Collector Pulsed (Icm)：13 A
Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 2A
Power - Max：32 W
Switching Energy：-
Input Type：Standard
Gate Charge：10.6 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：920 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：TO-268AA
Grade：-
Qualification：-

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IXBT2N250

Overview

The IXBT2N250 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and features a TO-268HV (D3PAK-3) surface-mount package with three pins. The device supports through-hole or SMD mounting styles and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a collector-emitter voltage (VCEO) of 2.5 kV, a continuous collector current (Ic) of 2 A at 25°C, and a maximum power dissipation (Pd) of 32 W. The saturation voltage is specified at 3.8 V, with a gate-emitter leakage current of 100 nA.

Feature Summary

High-voltage capability with a 2.5 kV collector-emitter breakdown voltage for robust switching in demanding environments.
Integrated monolithic design combining MOS input and bipolar output characteristics for efficient control.
Surface-mount D3PAK-3 package configuration optimized for automated assembly and thermal management.

Applications

High-voltage DC-DC converter circuits
Induction heating power supplies
Solid-state relay modules

Procurement Notes

Verify the specific suffix code against the manufacturer datasheet to confirm exact pinout and thermal specifications. Ensure the ordering part number matches the required TO-268HV package variant. Cross-reference RoHS compliance status directly with official documentation before procurement.

Selection Notes

Select this component when a high blocking voltage of 2.5 kV is required in a compact surface-mount form factor. Consider the 32 W power dissipation limit and ensure adequate heatsinking for the TO-268HV package. Verify that the 2 A continuous current rating meets the load requirements of the target application circuit.

Part Context

This IGBT belongs to the IXYS high-voltage discrete semiconductor portfolio. It is designed for applications requiring reliable switching at elevated voltages. The TO-268HV package provides a balance between electrical performance and mechanical integration for industrial power electronics.