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Product Detailed Parameters
- Description：IGBT 3000V 104A TO-268HV
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：104 A
- Current - Collector Pulsed (Icm)：400 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 42A
- Power - Max：500 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：72ns/445ns
- Test Condition：1500V, 42A, 20Ohm, 15V
- Reverse Recovery Time (trr)：1.7 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXBT)
- Grade：-
- Qualification：-
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Overview
The IXBT42N300HV is a high-voltage, monolithic Bipolar MOS transistor manufactured by IXYS. It features a collector-emitter breakdown voltage of 3000V and a continuous collector current of 42A at 25°C. The device utilizes the TO-268 (D³PAK) surface-mount package with a tab for thermal management. Key electrical parameters include a collector-emitter saturation voltage of 3.0V at 15V gate drive and 42A, a maximum power dissipation of 357W to 500W depending on conditions, and a pulse collector current capability of 400A. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- Monolithic integration of bipolar and MOS technologies for high-voltage switching
- Surface-mount D³PAK package design for efficient thermal dissipation
- High gain characteristics suitable for direct gate drive applications
Applications
- High-voltage industrial motor drives
- Uninterruptible power supply (UPS) systems
- High-frequency welding equipment
Procurement Notes
Verify the specific datasheet revision and ordering suffix upon procurement, as manufacturing updates may occur. Confirm that the TO-268 footprint matches the target PCB layout, particularly regarding the thermal tab dimensions. Ensure compliance with RoHS and REACH standards required for the destination market. Check for any moisture sensitivity labeling if storage conditions exceed specified limits.
Selection Notes
Select this component when a single-switch solution for 3kV applications is required in a surface-mount form factor. Compare the 3.0V saturation voltage against alternative packages like TO-247 to evaluate thermal resistance trade-offs. Consider the 400A pulse current rating for inrush or fault conditions. Verify that the gate drive voltage of 15V aligns with the control circuitry capabilities.
Part Context
This part belongs to the IXYS High Voltage BiMOSFET series, designed for robust performance in demanding power electronics environments. It represents a transition point between traditional through-hole IGBTs and modern surface-mount solutions for medium-to-high power levels. The technology combines the ease of MOSFET driving with the low conduction losses of bipolar transistors.
Replacement Considerations
The IXBH42N300HV is a pin-compatible through-hole alternative within the same family. Cross-referencing with other manufacturers requires verifying the 3000V rating and TO-268 mechanical compatibility.
