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Product Detailed Parameters
- Description：IGBT 2500V 55A PLUS247
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：55 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 25A
- Power - Max：300 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：103 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.6 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXBX25N250 is a high-voltage, high-gain BiMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a high blocking voltage capability and utilizes an international standard package design. The device is engineered to deliver low conduction losses while maintaining a low gate drive requirement. These characteristics support high power density applications in demanding electronic circuits.
Feature Summary
- High blocking voltage capability for robust operation
- Low conduction losses for improved efficiency
- Low gate drive requirement simplifying control circuitry
- International standard package for compatibility
Applications
- Switch-mode power supplies
- Resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Laser generators
- Capacitor discharge circuits
Procurement Notes
Verify the manufacturer datasheet for specific electrical limits and thermal characteristics before integration. Confirm package dimensions match the target PCB footprint. Ensure the supply chain source provides authentic IXYS components to guarantee performance reliability in high-voltage switching environments.
Selection Notes
Select this component for designs requiring high voltage isolation with efficient conduction. The low gate drive need reduces driver complexity. Evaluate thermal management requirements based on the specified package type. Compare against alternative high-voltage transistors if specific switching speed or current ratings differ from project needs.
Part Context
This part belongs to the IXBX series of high-voltage monolithic bipolar MOS transistors. It represents a solution for applications needing reliable high-voltage switching with minimal drive power. The technology combines bipolar and MOS characteristics to optimize performance in power conversion systems.
Replacement Considerations
Check for direct pin-compatible substitutes within the IXBX family or equivalent high-voltage IGBTs/MOSFETs from other manufacturers. Verify that replacement parts meet the same voltage, current, and thermal specifications.
