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The IXBX64N250 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single configuration housed in a TO-247AD-3 package, designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 2.5 kV and delivers a continuous collector current of 128 A at 25°C. Key electrical parameters include a saturation voltage of 3.1 V, a power dissipation rating of 500 W, and an operating temperature range from -55°C to +150°C.
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-247AD-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 500 W power dissipation under your intended operating conditions.
Select this component when designing circuits requiring high voltage isolation up to 2.5 kV combined with significant current handling capabilities. The integrated anti-parallel diode simplifies topology design for inductive loads. Consider the thermal resistance characteristics of the TO-247AD-3 package to ensure reliable junction temperature maintenance within the specified limits during continuous operation.
This IGBT belongs to the IXBX series of monolithic bipolar MOS transistors from IXYS. These devices are engineered for high-power density applications where low switching losses and high current handling are critical. The series typically targets industrial power conversion systems requiring reliable performance under harsh electrical conditions.
Publicly confirmed substitute part numbers for the IXBX64N250 were not identified in available documentation. Verify compatibility with alternative high-voltage IGBTs based on matching voltage ratings, current capacities, and package specifications.