IXBX64N250

IXBX64N250

$109.40
  • Description:IGBT 2500V 156A PLUS247
  • Series:BIMOSFET™

SKU:da0ee5c493e0 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 2500V 156A PLUS247
  • Series:BIMOSFET™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):2500 V
  • Current - Collector (Ic) (Max):156 A
  • Current - Collector Pulsed (Icm):600 A
  • Vce(on) (Max) @ Vge, Ic:3V @ 15V, 64A
  • Power - Max:735 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:400 nC
  • Td (on/off) @ 25°C:49ns/232ns
  • Test Condition:1250V, 128A, 1Ohm, 15V
  • Reverse Recovery Time (trr):160 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Variant
  • Supplier Device Package:PLUS247™-3
  • Grade:-
  • Qualification:-

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IXBX64N250

Overview

The IXBX64N250 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single configuration housed in a TO-247AD-3 package, designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 2.5 kV and delivers a continuous collector current of 128 A at 25°C. Key electrical parameters include a saturation voltage of 3.1 V, a power dissipation rating of 500 W, and an operating temperature range from -55°C to +150°C.

Feature Summary

  • High blocking voltage capability for robust high-voltage operation
  • Integrated anti-parallel diode for efficient switching applications
  • Low gate drive requirement reducing control circuit complexity
  • High current handling capacity suitable for demanding power loads

Applications

  • Switch-mode and resonant-mode power supplies
  • Uninterrupted power supplies (UPS)
  • Capacitor discharge circuits
  • Laser generators

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-247AD-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 500 W power dissipation under your intended operating conditions.

Selection Notes

Select this component when designing circuits requiring high voltage isolation up to 2.5 kV combined with significant current handling capabilities. The integrated anti-parallel diode simplifies topology design for inductive loads. Consider the thermal resistance characteristics of the TO-247AD-3 package to ensure reliable junction temperature maintenance within the specified limits during continuous operation.

Part Context

This IGBT belongs to the IXBX series of monolithic bipolar MOS transistors from IXYS. These devices are engineered for high-power density applications where low switching losses and high current handling are critical. The series typically targets industrial power conversion systems requiring reliable performance under harsh electrical conditions.

Replacement Considerations

Publicly confirmed substitute part numbers for the IXBX64N250 were not identified in available documentation. Verify compatibility with alternative high-voltage IGBTs based on matching voltage ratings, current capacities, and package specifications.

IXBX64N250IXBX64N250
$109.40
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