IXBX75N170A

Overview

The IXBX75N170A is a BiMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features an N-channel IGBT structure with an integrated anti-parallel diode, housed in a TO-264 (PLUS247) three-pin through-hole package. The device supports a maximum collector-emitter voltage of 1700 V and a continuous collector current of 75 A. Key electrical parameters include a saturation voltage of 3.1 V or less at rated conditions and a turn-off time of 840 ns. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Monolithic integration of N-channel IGBT and anti-parallel diode for compact power control
• High blocking voltage capability suitable for high-voltage switching applications
• Low gate drive requirement reducing control circuit complexity
• Integrated diode functionality provides inherent protection capabilities

Applications

• Capacitor discharge circuits
• AC switches
• Switch-mode and resonant-mode power supplies
• Uninterruptible Power Supplies (UPS)
• AC motor drives

Procurement Notes

Verify the specific suffix 'A' against official IXYS documentation to confirm pinout and parameter alignment with the standard IXBX75N170 variant. Ensure the procurement channel provides valid RoHS compliance certificates. Confirm the package type matches the required PLUS247 form factor for your PCB layout. Request the latest datasheet revision to verify any potential design changes or updates to the electrical characteristics before finalizing the order.

Selection Notes

Select this component when designing systems requiring high voltage isolation combined with significant current handling capacity. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Consider the thermal management requirements associated with the specified power dissipation levels. Evaluate the switching speed characteristics against the specific frequency demands of the target application to ensure efficient operation without excessive losses.

Part Context

This device belongs to the IXYS BiMOSFET family, which combines the advantages of bipolar transistors with MOS gate control. The series is designed for robust performance in industrial power electronics. The TO-264 package offers standardized mounting dimensions compatible with various heatsinking solutions. This technology level represents a mature solution for medium-to-high power conversion tasks.

Replacement Considerations

Check for direct substitutes within the IXYS portfolio such as the IXBK75N170. Verify that alternative parts maintain identical voltage ratings, current capacities, and package dimensions. Ensure compatibility with existing gate drive circuits and thermal interfaces before implementing any cross-brand replacements.