IXDH20N120

$3.28

Description：IGBT NPT 1200V 38A TO-247AD
Series：-

SKU:64091757e546 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 38A TO-247AD
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：38 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：3V @ 15V, 20A
Power - Max：200 W
Switching Energy：3.1mJ (on), 2.4mJ (off)
Input Type：Standard
Gate Charge：70 nC
Td (on/off) @ 25°C：-
Test Condition：600V, 20A, 82Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXDH20N120

Overview

The IXDH20N120 is a silicon NPT (Non-Punch-Through) Insulated Gate Bipolar Transistor manufactured by IXYS. It features a TO-247AD through-hole package and supports single-channel configuration. Key electrical parameters include a collector-emitter voltage of 1200 V, a continuous collector current of 20 A, and a maximum power dissipation of 250 W. The device operates within a temperature range of -55°C to +150°C.

Feature Summary

Utilizes Non-Punch-Through (NPT) silicon technology for robust high-voltage performance.
Designed with a TO-247AD through-hole package for reliable thermal management.

Applications

High-frequency switching power supplies
Induction heating systems
Motor control applications

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the TO-247AD pinout matches the target PCB layout. Ensure thermal interface materials are compatible with the specified maximum junction temperature limits.

Selection Notes

Select this component for circuits requiring 1200V blocking capability and moderate current handling. Compare against IGBT alternatives based on switching speed requirements and gate charge characteristics. Evaluate thermal resistance parameters against the system's heat sink capabilities.

Part Context

This part belongs to IXYS' discrete IGBT lineup, specifically utilizing NPT technology. It serves as a high-voltage switching element distinct from MOSFETs or lower-voltage IGBTs in the same portfolio. The TO-247AD form factor provides a balance between current capacity and mounting simplicity.