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The IXDN55N120D1 is a discrete N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 100 A at 25°C. The device utilizes a Minibloc-4 flange mount package with an isolated case connection, designed for high-power applications. Key electrical parameters include a rated turn-off time of 570 ns and a rated turn-on time of 170 ns. The component operates within a temperature range from -55°C to +175°C and is constructed using silicon technology.
Verify the specific suffix D1 against official IXYS documentation to confirm pinout and packaging details. Ensure the procurement channel provides valid traceability for this discrete IGBT. Check for any recent lifecycle notices or obsolescence warnings directly from the manufacturer before finalizing orders.
Select this component for designs requiring high voltage isolation and significant current capacity in a single-flange package. Consider the 570 ns turn-off time when determining switching frequency limits. Verify that the thermal resistance characteristics of the Minibloc-4 package align with the system's heat dissipation requirements.
This part belongs to the IXYS discrete IGBT portfolio, specifically engineered for medium-to-high power conversion. The Minibloc-4 series offers a compact footprint compared to traditional modules while maintaining high thermal performance through direct chassis mounting.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official IXYS replacement guides or equivalent technical specifications from other manufacturers.