ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 600V 32A TO-220-3
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：32 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 20A
- Power - Max：140 W
- Switching Energy：900µJ (on), 400µJ (off)
- Input Type：Standard
- Gate Charge：70 nC
- Td (on/off) @ 25°C：-
- Test Condition：300V, 20A, 22Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
Download product information
Overview
The IXDP20N60BD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features an integrated anti-parallel diode and utilizes Non-Punch-Through (NPT) IGBT technology. The device is rated for a collector-emitter voltage of 600 V and supports a continuous collector current of 32 A at 25°C. Typical saturation voltage is 2.2 V. It is housed in a TO-220AB package with a diode configuration, designed for high-efficiency power switching applications.
Feature Summary
- Utilizes Non-Punch-Through (NPT) IGBT technology for robust performance
- Integrated anti-parallel diode for simplified circuit design
- Optimized for low switching losses and reduced tail current
- Latch-up free operation ensures reliable high-power switching
Applications
- Induction heating systems
- Uninterruptible Power Supplies (UPS)
- High-frequency motor drives
- Resonant converters
Procurement Notes
Verify the specific suffix 'BD1' to confirm the inclusion of the integrated diode and TO-220AB package style. Ensure compatibility with existing thermal management solutions for the through-hole mounting format. Cross-reference datasheet parameters against current design requirements before procurement.
Selection Notes
Select this component for applications requiring 600V blocking capability and moderate current handling up to 32A. The NPT technology offers advantages in temperature stability compared to punch-through designs. Consider the integrated diode feature if reverse current conduction is needed within the same package footprint.
Part Context
This part belongs to IXYS's discrete IGBT lineup, specifically designed for medium-power switching applications. The NPT technology provides a balance between low conduction losses and fast switching speeds. It serves as a solution for designers needing compact, high-reliability switches in industrial and consumer electronics.
Replacement Considerations
Direct substitutes may include other 600V 32A IGBTs with integrated diodes in TO-220AB packages from IXYS or other manufacturers. Verify pinout compatibility and thermal resistance specifications when considering alternative brands.
