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Product Detailed Parameters
- Description：IGBT NPT 1200V 36A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：36 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
- Power - Max：200 W
- Switching Energy：4.1mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 20A, 68Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXEH25N120 is a single N-channel IGBT in a TO-247AD package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 36 A at 25°C. The saturation voltage is typically 2.6 V at 25°C and 3.2 V at 125°C. Switching times include a turn-on delay of 205 ns, rise time of 105 ns, turn-off delay of 320 ns, and fall time of 175 ns. Thermal resistance from junction to case is 0.63 K/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- NPT3 technology with positive temperature coefficient for easy paralleling
- Fast switching with short tail current optimized for resonant circuits
- Optional HiPerFRED diode with fast reverse recovery and low forward voltage
Applications
- AC drives
- DC drives and choppers
- Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
- Inductive heating and cookers
Procurement Notes
Verify the specific suffix against official documentation to confirm component configuration. The base part number denotes the IGBT only, while the D1 suffix indicates inclusion of the integrated free-wheeling diode. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before procurement.
Selection Notes
Select this component for high-voltage applications requiring robust switching performance. The NPT3 structure ensures stable thermal behavior during parallel operation. Consider the D1 variant if an integrated anti-parallel diode is required for the circuit topology. Verify gate drive requirements align with the specified threshold and saturation characteristics.
Part Context
This device belongs to the IXEH series of insulated gate bipolar transistors manufactured by IXYS. It utilizes NPT3 technology designed for efficient power conversion. The component is housed in a standard TO-247AD through-hole package suitable for industrial power electronics applications.
Replacement Considerations
Official substitutes are not identified in the provided datasheet. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions with verified equivalent components from other manufacturers.
FAQ
What is the difference between IXEH25N120 and IXEH25N120D1?
The IXEH25N120 contains only the IGBT transistor. The IXEH25N120D1 includes an optional integrated HiPerFRED free-wheeling diode alongside the IGBT.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
How does the NPT3 technology benefit paralleling?
The NPT3 technology provides a positive temperature coefficient of saturation voltage, which facilitates easy paralleling of multiple devices without complex current balancing circuits.
