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The IXYS IXER35N120D1 is a high-voltage power module integrating an NPT3 IGBT and a HiPerFRED diode within an ISOPLUS 247 package. It features a collector-emitter breakdown voltage of 1200 V, a continuous collector current of 50 A at 25°C case temperature, and a typical saturation voltage of 2.8 V. The integrated freewheeling diode supports a forward current of 48 A at 25°C with a reverse recovery time of 80 ns. The component provides an isolation voltage of 2500 Vrms between the mounting tab and pins.
Verify the specific manufacturer datasheet to confirm current production status and exact electrical tolerances. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values. Confirm that the ISOPLUS 247 mounting force requirements are met during assembly to maintain reliable electrical isolation and heat dissipation performance.
Select this module for applications requiring high voltage blocking capability combined with fast switching characteristics. The positive temperature coefficient of the NPT3 IGBT facilitates parallel operation for higher current handling. Consider the short tail current feature when designing resonant circuits to optimize switching performance and minimize losses.
This component belongs to the IXYS IXER series of high-voltage modules. It combines discrete semiconductor technologies into a single standardized package. The integration allows for compact circuit designs while maintaining robust electrical isolation and thermal performance suitable for demanding industrial power electronics environments.
Consult official IXYS documentation for confirmed substitute part numbers. Verify pinout compatibility and thermal interface dimensions before substituting.