IXFC20N80P

Single FETs, MOSFETs Overview

The IXFC20N80P is a single N-Channel enhancement mode Power MOSFET manufactured by IXYS. It belongs to the HiPerFET series and features an 800V drain-source breakdown voltage with a continuous drain current of 20A at 25°C. The device utilizes silicon technology and offers a maximum on-resistance of 420 milliohms. It is housed in a TO-264AA flange mount package, providing a power dissipation capacity of 310W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 800V drain-source breakdown rating
• Integrated fast intrinsic rectifier for switching applications
• Robust avalanche-rated construction for rugged operation
• Flange mount packaging for efficient thermal management

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Motor control circuits
• Induction heating systems
• DC-to-AC inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer source, as Littelfuse has acquired IXYS semiconductor assets. Confirm that the ordering suffix matches the required package variant and compliance standards. Ensure the component meets RoHS directives if applicable to your assembly process. Cross-reference datasheet revisions to confirm electrical parameters remain consistent with design requirements.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high blocking voltage and moderate current handling in a flange-mount configuration. Compare the 420 milliohm on-resistance against alternative packages like TO-247 or D2PAK to determine the optimal trade-off between thermal resistance and board space. Evaluate the gate charge specifications against driver capabilities to ensure adequate switching speeds without excessive losses.

Single FETs, MOSFETs Part Context

This part is a member of the IXYS HiPerFET family, which specializes in high-performance power MOSFETs for demanding industrial applications. The IXFC20N80P specifically targets designs needing robust performance in high-voltage environments. Its integration into the broader IXFN and IXFK series allows designers to choose appropriate packaging based on thermal and mechanical constraints while maintaining consistent electrical characteristics across the product line.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IXFK20N80Q and IXFH20N80P. Verify pinout compatibility and thermal interface dimensions before substitution. Check if the alternative part number offers improved on-resistance or different switching characteristics suitable for the specific application.