IXFN130N90SK

FET, MOSFET Arrays Overview

The IXFN130N90SK is a silicon carbide N-channel power MOSFET manufactured by IXYS. It utilizes the miniBLOC (SOT-227B) package for chassis mounting. The device features a drain-source voltage rating of 900V and a continuous drain current of 130A at case temperature. Key electrical parameters include a maximum on-resistance of 45 milliohms at 20V gate drive, a gate charge of 68nC at 20V, and an input capacitance of 10,000pF at 1000V. The component supports a junction temperature range from -40°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) technology for high thermal stability and efficiency
• Designed for chassis mounting via the SOT-227B miniBLOC package
• Features low on-resistance to minimize conduction losses in high-power applications

FET, MOSFET Arrays Applications

• High-frequency switching power supplies
• Industrial motor drives
• Uninterruptible power supply (UPS) systems

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure component authenticity. Confirm that the packaging integrity remains intact during transit to prevent damage to the ceramic substrate. Cross-reference the ordering suffix with official IXYS documentation to validate the exact pinout and specification variant before integration into production designs.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring high-voltage handling with superior thermal performance compared to silicon alternatives. The SOT-227B package facilitates direct heat sinking to chassis structures, simplifying thermal management in compact enclosures. Ensure the gate driver can support the required 20V drive level to achieve the specified low on-resistance characteristics effectively.

FET, MOSFET Arrays Part Context

This part belongs to the IXYS SiC Power MOSFET family, specifically utilizing the miniBLOC form factor. It serves as a high-performance alternative to traditional silicon MOSFETs in applications demanding reduced switching losses and higher operating temperatures. The series is engineered for robust operation in demanding industrial and automotive environments.

FET, MOSFET Arrays Replacement Considerations

Direct replacements require matching the 900V rating, 130A current capacity, and SOT-227B footprint. Verify that substitute devices offer comparable on-resistance and gate charge specifications to maintain circuit efficiency and switching speed without redesigning the thermal or drive infrastructure.