IXFN27N120SK

FET, MOSFET Arrays Overview

The IXFN27N120SK is a single N-channel Silicon Carbide (SiC) MOSFET from the HiPerFET family, manufactured by IXYS. It utilizes a SOT-227B (miniBLOC) surface-mount package designed for high-power applications. The device features a drain-source breakdown voltage of 1200 V and supports a continuous drain current of 68 A at case temperature. Key electrical characteristics include a maximum gate charge of 161 nC at 20 V and an input capacitance of 2790 pF at 1000 V. It operates within a junction temperature range of -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) technology for superior thermal performance and high-temperature operation up to 175°C.
• Features a robust SOT-227B (miniBLOC) base-mounted package optimized for efficient heat dissipation in power modules.
• Designed as a single N-channel enhancement-mode device with low switching losses suitable for high-frequency converters.

FET, MOSFET Arrays Applications

• High-efficiency DC-DC converters
• Uninterruptible Power Supplies (UPS)
• Industrial motor drives

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and RoHS compliance status before integration, as manufacturing parameters may evolve. Confirm that the SOT-227B footprint matches your PCB design constraints. Ensure thermal management solutions are adequate for the 68A continuous current rating under your specific operating conditions. Check for any recent Product Change Notifications (PCNs) regarding material or process updates.

FET, MOSFET Arrays Selection Notes

Select this component when high-voltage isolation and wide-bandgap efficiency are required. The 1200V rating provides safety margin for 600V or 800V bus systems. Compare total switching losses against silicon alternatives to justify the SiC cost premium. Ensure gate drive voltages remain within the specified +20V/-5V limits to prevent device damage.

FET, MOSFET Arrays Part Context

This part belongs to the IXYS HiPerFET series, which focuses on high-performance discrete power semiconductors. The 'SK' suffix typically denotes specific packaging or tape-and-reel configurations within the manufacturer's catalog. It complements other SiC devices like the IXFN70N120SK, offering lower current capacity but potentially higher density per unit volume.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible replacements should be sought within the same SOT-227B form factor. Verify that substitute parts meet or exceed the 1200V Vds and 68A Id ratings. Cross-reference thermal resistance values to ensure equivalent cooling requirements. Note that some distributors list similar models as end-of-life; confirm availability status carefully.