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IXFX25N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 900V 25A PLUS247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXFX25N90
- Description：MOSFET N-CH 900V 25A PLUS247-3
- Series：HiPerFET™
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：330mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs：240 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：10800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：560W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PLUS247™-3
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for IXFX25N90
Single FETs, MOSFETs Overview
The IXFX25N90 is a single N-channel enhancement mode MOSFET from the HiPerFET series, manufactured by IXYS. It utilizes Silicon technology and features a TO-247-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 900 V and a continuous drain current (Id) of 25 A. The device exhibits a maximum on-resistance (Rds On) of 330 mOhms. It supports a power dissipation (Pd) of 560 W and operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 900 V drain-source breakdown voltage for robust switching applications
- Low on-resistance achieved through HDMOSTM process technology
- Enhanced thermal performance with high power dissipation rating in standard through-hole packaging
Single FETs, MOSFETs Applications
- High-voltage DC-DC converters
- Induction heating systems
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify component authenticity against official IXYS datasheets due to obsolete status. Confirm package integrity and pinout compatibility with existing PCB footprints. Check for RoHS compliance documentation if required by specific project regulations. Ensure sourcing channels provide valid traceability records for quality assurance purposes.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in through-hole configurations. Compare Rds On values against alternative HiPerFET variants to optimize conduction losses. Evaluate thermal management requirements given the 560 W dissipation rating and ensure adequate heatsinking solutions are integrated into the system design.
Single FETs, MOSFETs Part Context
This part belongs to the HiPerFET family of power MOSFETs designed for high-efficiency switching. It represents an older generation product line from IXYS, now classified as not recommended for new designs. Engineers should consider modern replacements for long-term supply chain stability while acknowledging its historical use in industrial power electronics.
Single FETs, MOSFETs Replacement Considerations
Consult IXYS documentation for direct cross-references such as IXFK26N90 or IXFX26N90. Verify that substitute parts maintain compatible voltage ratings, current capabilities, and package dimensions before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
