ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 4500V 74A ISOPLUS264
- Series：X2PT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：4500 V
- Current - Collector (Ic) (Max)：74 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：ISOPLUS264™
- Supplier Device Package：ISOPLUS264™
- Grade：-
- Qualification：-
Download product information
Overview
The IXG50I4500KN is a single NPT (Non-Punch-Through) Disc IGBT manufactured by IXYS, designed for very high voltage applications. It features an ISOPLUS264HV-3 package and supports through-hole mounting. The device has a maximum collector-emitter voltage of 3.3 kV and a continuous collector current of 74 A at 25°C. The saturation voltage is specified as 3.2 V.
Feature Summary
- Utilizes Non-Punch-Through (NPT) technology for robust high-voltage performance
- Engineered with low Single Event Burnout (SEB) failure rates
- Designed to provide adequate voltage derating margins over the component lifetime
Applications
- High voltage industrial power conversion systems
- Medium voltage motor drive applications
- Industrial inverter circuits requiring high blocking voltage
Procurement Notes
Verify the specific suffix 'KN' against the manufacturer's latest datasheet to confirm compliance with RoHS standards and lead-free requirements. Ensure that the procurement channel provides original parts with traceable documentation to guarantee authenticity and prevent counterfeit components from entering the supply chain.
Selection Notes
Select this component when a high blocking voltage of 3.3 kV is required alongside moderate current handling capabilities. The NPT structure makes it suitable for applications demanding reliability against single event burnout. Consider the thermal management requirements associated with the ISOPLUS264HV-3 package for effective heat dissipation in high-power density designs.
Part Context
This part belongs to the DISC IGBT category within the IXYS portfolio, specifically targeting very high voltage markets. It complements other IXYS power semiconductors like the IXG65I3300KN, offering a distinct voltage-current profile optimized for industrial environments where high voltage isolation and ruggedness are critical design parameters.
Replacement Considerations
For direct replacements, consider the IXG65I3300KN if higher current capacity is needed, though voltage ratings differ slightly. Verify pin compatibility and thermal characteristics before substituting with other 3.3 kV disc IGBTs from different manufacturers.
