ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 1200V 22A TO-263AA
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：22 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：20.4 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
Download product information
Overview
The IXGA12N120A3 is a GenX3 series single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 1200V collector-emitter voltage rating and a continuous collector current of 12A at 25°C. The device utilizes planar trench gate technology to achieve low saturation voltage, typically capped at 2.5V. Packaged in standard through-hole formats like TO-247AD, it supports a maximum junction temperature of 175°C and offers high power density with low gate drive requirements for efficient switching applications.
Feature Summary
- Ultra-low saturation voltage achieved via Planar Trench technology
- Optimized for low conduction losses up to 3 kHz switching frequencies
- High power density design with reduced gate drive requirements
Applications
- Power inverters
- Motor drives
- Uninterruptible Power Supplies (UPS)
- Switching Mode Power Supplies (SMPS)
Procurement Notes
Verify the specific suffix against the official datasheet to confirm package type and electrical tolerances. Ensure the component matches the required voltage and current ratings for the target circuit. Confirm RoHS compliance status if environmental regulations apply. Check for any obsolescence notices or recommended new designations from the manufacturer before finalizing procurement.
Selection Notes
Select this IGBT for designs requiring moderate current handling with strict efficiency constraints. The low VCE(sat) makes it suitable for applications where conduction loss dominates. Verify that the thermal management solution can handle the specified power dissipation at the expected operating temperature. Ensure the gate driver provides appropriate voltage levels within the -20V to +20V range.
Part Context
This component belongs to the IXYS GenX3 family, which integrates advanced trench gate and field stop technologies. These devices are engineered to balance switching speed and conduction efficiency. The IXGA12N120A3 represents a specific current rating variant within this high-voltage portfolio, designed for robust performance in industrial power electronics.
Replacement Considerations
Consult the official IXYS cross-reference guide for verified substitutes. Ensure any replacement maintains the 1200V rating and compatible pinout. Verify that alternative packages match the thermal and mechanical constraints of the existing design.
