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Product Detailed Parameters
- Description：IGBT PT 600V 40A TO-263AA
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 12A
- Power - Max：150 W
- Switching Energy：160µJ (on), 90µJ (off)
- Input Type：Standard
- Gate Charge：25 nC
- Td (on/off) @ 25°C：16ns/75ns
- Test Condition：400V, 12A, 22Ohm, 15V
- Reverse Recovery Time (trr)：30 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXGA16N60C2D1 is a single Planar Technology (PT) Insulated Gate Bipolar Transistor manufactured by IXYS. It features a 600 V collector-emitter breakdown voltage and supports a continuous collector current of 40 A with a pulse current capacity of 100 A. The device utilizes a TO-263-3 (D2PAK) surface-mount package. Key electrical parameters include a maximum saturated collector-emitter voltage of 3 V at 15 V gate drive and 12 A collector current. Switching characteristics are defined by an on-state energy of 160 µJ and an off-state energy of 90 µJ, measured under standard test conditions of 400 V, 12 A, 22 Ω, and 15 V. The total gate charge is 25 nC.
Feature Summary
- Planar Technology construction for optimized switching performance
- Surface-mount D2PAK packaging for automated assembly
- Standard input type compatible with common driver circuits
Applications
- High-frequency power switching applications
- Motor control systems
- Uninterruptible power supplies
Procurement Notes
Verify the specific suffix D1 against official datasheets to confirm pinout and thermal pad configuration. Confirm component availability status as distribution data indicates end-of-life or limited stock conditions. Ensure compatibility with existing PCB footprints for TO-263-3 packages during sourcing.
Selection Notes
Select this component for designs requiring a balance between low conduction loss and manageable switching energy in a compact surface-mount form factor. Evaluate thermal management requirements based on the 150 W maximum power dissipation rating. Compare gate charge specifications against available driver capabilities to ensure adequate switching speed without excessive drive current demands.
Part Context
This IGBT belongs to the IXYS IXGA series, which focuses on high-performance planar technology devices. The series is designed for general-purpose switching applications where efficiency and reliability are critical. The TO-263-3 package provides a robust mechanical solution for heat dissipation while maintaining a small footprint suitable for dense circuit board layouts.
Replacement Considerations
Publicly confirmed substitute part numbers were not identified in the provided documentation. Verify direct replacements through official manufacturer cross-reference lists before implementation.
