IXGA20N120B

Description：IGBT 1200V 40A TO-263AA
Series：-

SKU:a21e5b220855 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 40A TO-263AA
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：150 W
Switching Energy：6.5mJ (off)
Input Type：Standard
Gate Charge：63 nC
Td (on/off) @ 25°C：28ns/400ns
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AA
Grade：-
Qualification：-

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IXGA20N120B

Overview

The IXGA20N120B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and belongs to the GenX3 product family. The device features a TO-263-3 (D2PAK) surface-mount package designed for through-hole or SMD installation. Key electrical ratings include a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 80 A. The component operates within a temperature range from -55°C to +150°C.

Feature Summary

Incorporates GenX3 trench gate technology for optimized switching performance.
Features a square Reverse Bias Safe Operating Area (RBSOA).
Designed with low saturation voltage characteristics for efficiency.

Applications

High-frequency power conversion circuits
Motor drive inverters
Uninterruptible Power Supplies (UPS)
Induction heating systems

Procurement Notes

Verify the specific suffix against official datasheets, as packaging variants such as TRL indicate reel quantities. Confirm RoHS compliance status via manufacturer documentation. Ensure thermal management solutions match the TO-263-3 package constraints. Cross-reference part numbers to distinguish between standard and high-voltage variants within the same series.

Selection Notes

Select this component for applications requiring robust 1.2 kV blocking capability in a compact surface-mount form factor. The 80 A current rating supports high-power density designs. Consider the GenX3 technology benefits for reduced switching losses compared to older generations. Evaluate thermal resistance requirements for the D2PAK package under expected load conditions.

Part Context

This IGBT is part of IXYS's broader portfolio of high-voltage power semiconductors. It complements other devices like the IXGP and IXYX series by offering a balance of current handling and switching speed in a surface-mount package. The GenX3 platform represents an evolution in trench gate IGBT design, focusing on improved figure-of-merit metrics for industrial power electronics.