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The IXGA20N250HV-TRL is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-263 (D2PAK) surface-mount package and operates with a maximum collector-emitter voltage of 2500 V. The device supports a continuous collector current of 30 A at 25°C, with a typical collector-emitter saturation voltage of 3.1 V. Power dissipation is rated at 150 W, and the unit functions within a temperature range of -55°C to +150°C. This component utilizes XPT technology for enhanced performance in high-voltage applications.
Verify the specific suffix against official documentation to confirm reel packaging and tape specifications. Ensure the ordering part number matches the required RoHS compliance status and manufacturing date codes. Cross-reference the datasheet revision history to validate electrical parameters before finalizing procurement orders.
Select this component for designs requiring 2500 V blocking capability in a compact SMD form factor. Evaluate thermal management requirements based on the 150 W power dissipation rating. Confirm that the gate drive circuitry accommodates the specified ±20 V limits and that the PCB layout supports the D2PAK thermal pad requirements.
This model belongs to the IXYS high-voltage IGBT family, specifically utilizing XPT (eXtended Plate Technology). It shares core electrical characteristics with the tube-packaged IXGA20N250HV but differs in packaging configuration. The TRL suffix indicates a tape-and-reel format suitable for automated surface-mount assembly processes.
Direct functional substitutes include the IXGA20N250HV, which shares identical electrical ratings but uses tube packaging. Verify pinout compatibility and thermal resistance values when replacing components. No other official cross-model substitutes are documented for this specific part number.