IXGA30N60C3

Description：IGBT PT 600V 60A TO-263
Series：GenX3™

SKU:67a91beca57f Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 600V 60A TO-263
Series：GenX3™
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：3V @ 15V, 20A
Power - Max：220 W
Switching Energy：270µJ (on), 90µJ (off)
Input Type：Standard
Gate Charge：38 nC
Td (on/off) @ 25°C：16ns/42ns
Test Condition：300V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr)：26 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263 (D2PAK)
Grade：-
Qualification：-

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IXGA30N60C3

Overview

The IXGA30N60C3 is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It belongs to the GenX3 series and utilizes Silicon Carbide (SiC) technology. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 30 A at 25°C. It is housed in a TO-247AD-3 package with a through-hole mounting style. The component supports a maximum junction temperature of 175°C and operates within a minimum temperature range of -55°C.

Feature Summary

Incorporates Silicon Carbide (SiC) technology for enhanced thermal performance
Utilizes GenX3 architecture for optimized switching characteristics
Designed for high-temperature operation up to 175°C

Applications

High-frequency power conversion systems
Industrial motor drives
Uninterruptible power supplies (UPS)

Procurement Notes

Verify availability status directly with authorized distributors, as this component may be subject to discontinuation or limited supply constraints. Confirm RoHS compliance details and specific packaging quantities prior to ordering. Ensure that procurement channels are authorized to guarantee authenticity and traceability of the silicon carbide semiconductor material.

Selection Notes

Select this component for applications requiring robust high-temperature operation and efficient switching in medium-power scenarios. The SiC technology offers advantages over standard silicon devices in terms of thermal stability. Ensure gate drive circuits are compatible with the specified voltage limits and consider the thermal management requirements associated with the TO-247AD-3 package for optimal performance.

Part Context

This part is part of IXYS's GenX3 family of insulated gate bipolar transistors. The GenX3 series is characterized by advanced trench gate technology designed to reduce switching losses and improve overall efficiency. The IXGA30N60C3 specifically leverages silicon carbide substrate technology to achieve superior performance compared to traditional silicon-based IGBTs in similar voltage and current ratings.